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Analog Integrated Circuit Device Data
Freescale Semiconductor
21
34653
TYPICAL APPLICATIONS
rchived by Freescale Semiconductor, Inc., 2008
POWER MOSFET ENERGY CAPABILITY
Figure 23
 shows a projected energy capability of the 
devices internal Power MOSFET under a drain-to-source
voltage of 82 V and an ambient temperature of 90癈. It is
compared to the energy levels required for the capacitive
loads of 100 糉, 200 糉, and 400 糉 at 80 V for the
discharge periods of 16 ms, 32 ms, and 64 ms, respectively.
It is clear that the Power MOSFET well exceeds the required
energy capability for all three cases with a sufficient margin.
For example, the 400 糉 capacitor load with a 64 ms
discharge time requires an energy capability of about
1540
 mJ, which is well below the Power MOSFET capability
of about 3500 mJ. As a result to this analysis the 33652 is
expected to exceedingly meet all the energy capability
requirements for the possible capacitive loads.
 Figure 23. Projected Energy Capability of the Power
MOSFET Compared to the Required Energy Levels of
Some Capacitive Loads
400 糉
200 糉
100 糉
EstimatedforArea=1.7mm
2
0
500
1000
1500
2000
2500
3000
3500
Time (ms)
0
20
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60
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